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News


dongascience.com > en > news > 79798

KAIST boosts atom-thick 2D MoS2 semiconductor performance 260-fold

1+ week, 13+ hour ago   (501+ words) Plasma doping with 2 nm dual protection layers cuts contact resistance to one‑thirty‑second while preserving crystal structure A method has been developed to stably process 2D semiconductors. A 2D semiconductor is an ultra-thin semiconductor with a thickness of a single atomic…...


dongascience.com > en > news > 79575

[Sci-Tech NOW] UNIST develops protective process to boost 2D semiconductor transistors

3+ week, 9+ hour ago   (34+ words) DongA Science Korean sci-tech institutes report advances in MoS2 transistor fabrication, soft organoid scaffolds, AI-based transport physics, and AX-era AI–robot fusion talent...